PART |
Description |
Maker |
ISL9V3040D3S04 ISL9V3040S3ST ISL9V3040D3S ISL9V304 |
EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT 17A, 400V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
ISL9V3040D3S ISL9V3040P3 ISL9V3040S3S |
EcoSPARK TM 300mJ, 400V, N-Channel Ignition IGBT
|
Fairchild Semiconductor
|
IXGH24N50BS IXGH24N60BS |
TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 48A I(C) | TO-247SMD TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 48A I(C) | TO-247SMD 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 48A条一(c)|47SMD
|
IXYS, Corp.
|
ISL9G1260EP3 ISL9G1260ES3 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展|甲一(c)|63AB
|
Hynix Semiconductor, Inc.
|
OM6559SP1 OM6558SP1 OM6545SP1 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 25A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五(巴西)国际消费电子展|5A条(c)的|园区 TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 21A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五(巴西)国际消费电子展| 21A条(c)的|园区 TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 49A I(C) | SIP 晶体管| IGBT的|正陈| 500V五(巴西)国际消费电子展|9A一(c)|园区
|
Electronic Theatre Controls, Inc. OKI SEMICONDUCTOR CO., LTD.
|
FMG-33S/R |
Ultra-Fast-Recovery Rectifier Diodes(- 400V) 超快速恢复整流二极管- 400V
|
Sanken Electric Co., Ltd.
|
FML-36S FML-32S FML-33S FML-34S FML32S |
400V,Ultra-Fast-Recovery Rectifier Diodes(400V,超快恢复整流二极管)
|
http:// SANKEN[Sanken electric] Sanken Electric Co.,Ltd.
|
PVT412L PVT412S PVT412LS PVT412S-T PVT412 PVT412LS |
400V 1 Form A Photo Voltaic Relay in a 6-pin DIP Package 400V 1 Form A Photo Voltaic Relay in a 6-pin SMT Package Microelectronic Power IC Relay Single Pole, Normally Open, 0-400V, 140mA AC/DC MicroelectronicPowerICRelaySinglePole,NormallyOpen,0-400V,140mAAC/DC Stratum 3/3E Timing Card IC Stratum 3 Timing Card IC with Synchronous Ethernet Support
|
IRF
IRF[International Rectifier]
|
604B 1002A 1502A 602BI 1502BI |
TRIAC|400V V(DRM)|6A I(T)RMS|TO-218VAR TRIAC|400V V(DRM)|15A I(T)RMS|TO-218VAR SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating TRIAC|400V V(DRM)|10A I(T)RMS|TO-218VAR 可控硅| 400V五(DRM)的| 10A条口(T)的有效值|18VAR
|
Rochester Electronics, LLC
|
CG3310 ECG3323 ECG3312 |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-247VAR TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 8A I(C) | TO-247VAR
|
|
IRFW740 IRFW740B IRFI740B IRFW740BTM IRFW740BTMNL |
400V N-Channel B-FET / Substitute of IRFW740A 400V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|